Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er
Н. А. СоболевRussian Academy of SciencesA. M. Emel’yanovIoffe Physicotechnical Institute RASYu. A. KudryavtsevR. N. KyuttRAS - Ioffe Physico Technical InstituteM.I. MakovijchukInsitute of MicroelectronicsYu. A. NikolaevRAS - Ioffe Physico Technical InstituteE. O. ParshinВ. И. СахаровRAS - Ioffe Physico Technical InstituteI. T. SerenkovRAS - Ioffe Physico Technical InstituteE. I. ShekRussian Academy of SciencesK. F. Shtel’makhSt.Petersburg State Polytechnical University
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenabook series1997en
ABI
Annotatsiya
Annotatsiya mavjud emas.
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos0 ta foydalanilgan manba
Koʻrsatkichlar — AkademScholar · Tez orada