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A. M. Emel’yanov

5 ta ish

Ioffe Physicotechnical Institute RAS

  1. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

    MaqolaSilicon Nanostructures and PhotoluminescenceMaterials science forum19970 iqtibos
    ABI

  2. Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Kudryavtsev +8

    MaqolaSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 iqtibos
    ABI

  3. Defect Engineering in Si: Ho Light-Emitting Structure Technology

    Н. А. Соболев, A. M. Emel’yanov, R. N. Kyutt +1

    MaqolaSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19990 iqtibos
    ABI

  4. Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

    Н. А. Соболев, A. M. Emel’yanov, E. I. Shek +1

    MaqolaSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20030 iqtibos
    ABI

  5. SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions

    A. M. Emel’yanov, Н. А. Соболев, T. M. Mel’nikova +1

    MaqolaSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos
    ABI