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Photoconductivity of sulfur-doped silicon near 10.6 µm

Kh. B. SiyabekovTashkent State University, 700095, Tashkent, UzbekistanV. T. TulanovTashkent State University, 700095, Tashkent, Uzbekistan

Semiconductorsjournal1997en

ABI

Annotatsiya

The extrinsic photoconductivity of Si〈S〉 under short-wavelength (10.6 µm) illumination was investigated in the pulsed regime. It was found that sensitivity can be increased by 2–3 orders of magnitude by short-wavelength illumination. It was established that increasing the degree of compensation of the impurity levels of sulfur by γ-ray-induced acceptors decreases both the dark conductivity and the photoresponse due to pulsed illumination with a CO2 laser.

Mavzular

Thermography and Photoacoustic Techniques Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1134/1.1187300

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