Maqola

Nonselective polycrystalline radiation detectors based on higher manganese silicides

T. S. KamilovKokand State Pedagogical Institute, Kokand, UzbekistanA. Zh. KhusanovKokand State Pedagogical Institute, Kokand, UzbekistanМ. К. БахадырхановKokand State Pedagogical Institute, Kokand, UzbekistanD. K. KobilovKokand State Pedagogical Institute, Kokand, Uzbekistan

Technical Physics Lettersjournal2002en

ABI

Annotatsiya

The films of higher manganese silicides (HMSs) obtained by the oblique deposition of manganese vapor onto silicon substrates possess a preferred texture and exhibit anisotropic thermo emf. The main parameters of IR detectors based on these HMS films have been studied. It is shown that the detectors with ∼5-μm-thick HMS films possess an electric resistance of ∼200 Ω and are capable of monitoring time variations of the incident radiation with a characteristic response time of ≤10−6s and a transformation coefficient of 500 μ V/W.

Mavzular

Semiconductor materials and interfaces Advanced Semiconductor Detectors and Materials Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1134/1.1526887

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