A. Zh. Khusanov

3 ta ish

Tashkent State Technical University, Tashkent, Republic of Uzbekistan

1. Obtaining manganese silicide films on a silicon substrate by the diffusion method

   N. F. Zikrillayev, M. M. Shoabdurahimova, T. Kamilov +4

   MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20222 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.384841

2. Nonselective polycrystalline radiation detectors based on higher manganese silicides

   T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20021 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000079

3. Properties of “Higher Manganese Silicide-Silicon” Heterostructure

   Kobiljon K. ugli Kurbonaliev, Н. Ф. Зикриллаев, A. Zh. Khusanov

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.011308