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On Current Limitations in Porous SiC Applications

M. G. MynbaevaRussian Academy of SciencesA. A. Lavrent’evI. S. KotousovaA.N. VolkovaIoffe Physicotechnical Institute RASK. D. MynbaevRussian Academy of SciencesA. А. LebedevRussian Academy of Sciences

Materials science forumbook series2005en

ABI

Annotatsiya

Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technology and applications due to compositional and structure evolution at high temperatures are discussed.

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Mavzular

Silicon Nanostructures and Photoluminescence Semiconductor materials and devices Diamond and Carbon-based Materials Research

Identifikatorlar

DOI: 10.4028/www.scientific.net/msf.483-485.269

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