K. D. Mynbaev

3 ta ish

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000163

2. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   MaqolaSemiconductor materials and devicesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000245

3. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   MaqolaSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000114