Maqola

Impurity photovoltaic effect in silicon with multicharge Mn clusters

М. К. БахадырхановAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanХ. М. ИлиевAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanС. А. ТачилинAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanS. S. NasriddinovAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanБ. А. АбдурахмановAbu Raikhan Beruni Tashkent State Technical University, Tashkent, Uzbekistan

Applied Solar Energyjournal2008en

ABI

Annotatsiya

A new approach to formation of the impurity energy band is proposed that allows the solar IR spectrum to be utilized to generate the subband photocarriers. The essence of the proposed approach is the control in a wide range of the charge state of the atomic manganese (Mn) 4 + nanoclusters in the Si lattice. The creation of the 0.32-eV-wide impurity energy gap based on (Mn) 4 + in the Si bandgap is established.

Mavzular

Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices Silicon and Solar Cell Technologies

Identifikatorlar

DOI: 10.3103/s0003701x08020151

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