Impurity photovoltaic effect in silicon with multicharge Mn clusters
М. К. БахадырхановAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanХ. М. ИлиевAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanС. А. ТачилинAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanS. S. NasriddinovAbu Raikhan Beruni Tashkent State Technical University, Tashkent, UzbekistanБ. А. АбдурахмановAbu Raikhan Beruni Tashkent State Technical University, Tashkent, Uzbekistan
ABI
Аннотация
A new approach to formation of the impurity energy band is proposed that allows the solar IR spectrum to be utilized to generate the subband photocarriers. The essence of the proposed approach is the control in a wide range of the charge state of the atomic manganese (Mn) 4 + nanoclusters in the Si lattice. The creation of the 0.32-eV-wide impurity energy gap based on (Mn) 4 + in the Si bandgap is established.
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Цитирования и источники
Показатели — AkademScholar · Скоро