The Effect of the Formation of Silicides on the Resistivity of Silicon
Б. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, 100095, Tashkent, UzbekistanG. Kh. AllayarovaTashkent State Technical University, 100095, Tashkent, UzbekistanЖ.Ш. СодикжановTashkent State Technical University, 100095, Tashkent, Uzbekistan
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The effect of the formation of thin films of nickel silicides on the migration of intrinsic p-type impurities in silicon was studied for the first time. It was found that bulk resistance $${{\rho }_{{v}}}$$ of a single Si crystal increases by a factor of 3–4 if a NiSi2 film with thickness θ ≥ 50–100 Å forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 Å.
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