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Ish: The Effect of the Formation of Silicides on the Resistivity of Silicon
Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 iqtibosABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
MaqolaSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 iqtibosABIInteraction of cobalt atoms with an oxidized Si(100)2 × 1 surface
M. V. Gomoyunova, I. I. Pronin, D. E. Malygin +3
Maqola20052 iqtibosABI