Maqola

Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

A. Sh. RazzakovUrgench State UniversityA. MatnazarovUrgench State UniversityMutabar LatipovaUrgench State UniversityA. JapakovUrgench State University

Bulletin of Science and Practicejournal2020en

ABI

Annotatsiya

Abstract. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.

Mavzular

Silicon Nanostructures and Photoluminescence Solidification and crystal growth phenomena Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.33619/2414-2948/58/01

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