Mathematical modeling of the diffusion process of a semiconductor detector
RAMIZULLA MUMINOVInstitute of Materials Science, SPA “Physics-Sun”, Academy of Science of UzbekistanYorkin ToshmurodovKarshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization EngineersGiyosjon ErgashevInstitute of Materials Science, SPA “Physics-Sun”, Academy of Science of UzbekistanMAHMODJON YAVQOCHDIYEVKarshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
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The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is 50 × 50 × 1.5 mm and 8 bands, and compares them.
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