Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment
Annotatsiya
Secondary ion mass spectrometry is used to study the emission of negative ions from clusters of gallium, gallium nitride, and GaN/SiC dopants depending on the energy of the bombarding cesium ions, as well as on the substrate temperature. The emission of negative ions of clusters is shown to exponentially depend on the energy of bombarding ions in the threshold sputtering region, which confirms the recombination mechanism of cluster sputtering in this energy region. Gallium clustering indicates the formation of gallium-nitrogen divacancies during doping. The results of studying the dependence of the yield of atomic and cluster ions on the temperature of gallium nitride during bombardment with $${\text{C}}{{{\text{s}}}^{ + }}$$ ions show that that there occurs the co-segregation of carbon and oxygen impurities.