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Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

Б. Э. ЭгамбердиевTashkent State Technical University, Tashkent, UzbekistanA. S. MallayevKarshi State University, Karshi, UzbekistanSh. A. SayfulloevNational University of Uzbekistan, Tashkent, UzbekistanMahmud RahmatovKarshi State University, Karshi, Uzbekistan

AIP conference proceedingsjournal2021en

ABI

Annotatsiya

This article presents the results of studies of the distribution profiles of implanted iron atoms into silicon, depending on the irradiation dose and annealing temperature by the RBS method. The results obtained confirm similar data obtained by SIMS. The effect of thermal annealing on the distribution of iron and other impurities, in particular, oxygen, has been studied. The possibility of using the RBS method for analyzing the concentration distribution of doped impurities and the interaction of impurities with each other is presented.

Mavzular

Silicon and Solar Cell Technologies Ion-surface interactions and analysis Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1063/5.0071382

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