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9 ta ish

Ish: Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Maqola20109 iqtibos
    ABI

  2. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  3. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos
    ABI

  4. Sizes of X-ray radiation coherent domains in thin SmS films and their visualization

    Н. В. Шаренкова, В. В. Каминский, С. Н. Петров

    Maqola20114 iqtibos
    ABI

  5. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

    Maqola20094 iqtibos
    ABI

  6. Low-temperature crystallization of semiconductor solid solutions that are promising for the realization of the extrinsic thermophotovoltaic effect

    М. С. Саидов

    MaqolaAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20072 iqtibos
    ABI

  7. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    Artur Medvid, Pāvels Onufrijevs, Renata Jarimaviciute-Gudaitiene +2

    Maqola20132 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI