Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics of National University of Uzbekistan, Tashkent, UzbekistanShakhrukh Kh. DalievInstitute of Semiconductor Physics and Microelectronics of National University of Uzbekistan, Tashkent, UzbekistanElmira M. NaurzalievaInstitute of Semiconductor Physics and Microelectronics of National University of Uzbekistan, Tashkent, UzbekistanXushnida Yu. UtemuratovaKarakalpak State University, Nukus, Karakalpakstan
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Silicon doped with gadolinium and silver impurities were studied using a Renishaw InVia Raman spectrometer. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. Some changes are observed in the Raman spectra of gadolinium-doped silicon samples compared to the initial sample. It has been experimentally found that an increase in the silver impurity concentration in gadolinium-doped silicon leads to a smoothing of the Raman spectrum, which indicates the formation of a more perfect crystal structure.
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