Ushbu ishga iqtibos qilgan ishlar

5 ta ish

Ish: Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002753

2. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   MaqolaMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003016

3. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003062

4. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.008623

5. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.009031