Ushbu ish iqtibos qilgan ishlar

57 ta ish

Ish: Revealing Bipolar Photoresponse in Multiheterostructured WTe2–GaTe/ReSe2–WTe2 P–N Diode by Hybrid 2D Contact Engineering

The rise of graphene
A. K. Geǐm, Kostya S. Novoselov
Maqola200728 iqtibos
ABI
Two-dimensional atomic crystals
Kostya S. Novoselov, Da Jiang, F. Schedin +4
Maqola20059 iqtibos
ABI
Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions
Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8
MaqolaGraphene research and applicationsACS Applied Electronic Materials20236 iqtibos
ABI
Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction
Ehsan Elahi, Muhammad Farooq Khan, Shania Rehman +9
Maqola20204 iqtibos
ABI
Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials
Muhammad Abubakr, Ehsan Elahi, Shania Rehman +10
Maqola2D Materials and ApplicationsMaterials Today Physics20233 iqtibos
ABI
Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping
Muhammad Waqas Iqbal, Aliya Amin, Muhammad Arshad Kamran +7
Maqola20193 iqtibos
ABI
Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect
Hai Huang, Jianlu Wang, Weida Hu +13
Maqola20163 iqtibos
ABI
Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides
Dong Hyun Lee, Muhammad Rabeel, Young-Min Han +4
Maqola20233 iqtibos
ABI
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
Hehai Fang, Weida Hu, Peng Wang +14
Maqola20163 iqtibos
ABI
Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts
Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal +4
Maqola20193 iqtibos
ABI
The role of 2-Dimensional materials for electronic devices
Priya Kaushal, Gargi Khanna
Maqola20222 iqtibos
ABI
Optical modulators with 2D layered materials
Zhipei Sun, A. Martinez, Feng Wang
Maqola20162 iqtibos
ABI
Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
Nengjie Huo, Gerasimos Konstantatos
Maqola20172 iqtibos
ABI
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Frank H. L. Koppens, Thomas Mueller, Phaedon Avouris +3
Sharh maqola20142 iqtibos
ABI
Electronics based on two-dimensional materials
Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone +5
Maqola20142 iqtibos
ABI
Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection
Peng Wang, Shanshan Liu, Wenjin Luo +12
Maqola20172 iqtibos
ABI
Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions
Alei Li, Qianxue Chen, Peipei Wang +8
Maqola20182 iqtibos
ABI
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit
Seunguk Song, Yeoseon Sim, Se‐Yang Kim +13
Maqola20202 iqtibos
ABI
Transistors based on two-dimensional materials for future integrated circuits
Saptarshi Das, Amritanand Sebastian, Eric Pop +15
Maqola20212 iqtibos
ABI
Contacts in 2D
S Das, P.-C Shen, G Kwon
Maqola20222 iqtibos
ABI
Wafer-scale and universal van der Waals metal semiconductor contact
Lingan Kong, Ruixia Wu, Yang Chen +20
Maqola20232 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI

Ushbu ish iqtibos qilgan ishlar

The rise of graphene

Two-dimensional atomic crystals

Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe<sub>2</sub>/Gr heterojunction

Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials

Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

Highly sensitive visible to infrared MoTe<sub>2</sub>photodetectors enhanced by the photogating effect

Self-Assembled Monolayer Doping for MoTe<sub>2</sub> Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire

Formation of an MoTe<sub>2</sub> based Schottky junction employing ultra-low and high resistive metal contacts

The role of 2-Dimensional materials for electronic devices

Optical modulators with 2D layered materials

Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Electronics based on two-dimensional materials

Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe<sub>2</sub>/Graphene/SnS<sub>2</sub> p–g–n Junctions

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Transistors based on two-dimensional materials for future integrated circuits

Contacts in 2D

Wafer-scale and universal van der Waals metal semiconductor contact

Sarlavhasiz

Sarlavhasiz

Sarlavhasiz

Sarlavhasiz