Obtaining Thin Films from Semiconductor Compounds and Their X-Ray Analysis
Annotatsiya
In this work, formation of thin layers of metal oxide, semiconductor compounds (BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and CaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) in the EPOS PVD DESK PRO magnetron sputtering device in radio frequency mode, their amorphous and crystalline phases, structural structure and optical properties were studied.Initially, BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> thin films were formed by radio frequency magnetron sputtering from a circular barium titanate target with a diameter of 76.2 mm. The X-ray phase analysis of the BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> compound was determined and the dispersion spectrum has a refractive index of 2.4 at a wave number of 821.68 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup>. As a result of processing the spectra obtained using an infrared spectrophotometer, it was determined that the band gap of the semiconductor compound is 3.15 eV. The X-ray and infrared absorption and transmission spectra of CaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> powder, which belongs to the perovskite family, were analyzed, and one of the urgent tasks is to prepare a target for radio frequency magnetron sputtering. In the electronic industry, these perovskite compounds can serve as a valuable additive to improve various memory elements and dielectric layers of solar cells.