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Ushbu ish iqtibos qilgan ishlar

13 ta ish

Ish: Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

  1. The electrical properties of zinc in silicon

    Sharon M. Weiss, R. Beckmann, Rainer Kassing

    Maqola19903 iqtibos
    ABI

  2. Carrier transport mechanisms in semiconductor nanostructures and devices

    M. A. Rafiq

    Maqola20183 iqtibos
    ABI

  3. Diffusion and Electrical Behavior of Zinc in Silicon

    C. S. Fuller, François Morin

    Maqola19573 iqtibos
    ABI

  4. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

    E.U. Arzikulov, M. Radzhabova, Sh. J. Quvondiqov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos
    ABI

  5. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K

    Sana Boughdachi, Yosef Badalı, Yashar Azizian‐Kalandaragh +1

    Maqola20182 iqtibos
    ABI

  6. Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials

    David Degler, Udo Weimar, Nicolae Bârsan

    Sharh maqola20192 iqtibos
    ABI

  7. Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

    A. Türüt

    Maqola20202 iqtibos
    ABI

  8. Tunneling via surface dislocation in W/β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes

    Madani Labed, Ji Young Min, Amina Ben Slim +4

    Maqola20232 iqtibos
    ABI

  9. Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer

    Muhammed Can ÖZDEMİR, Ömer Sevgi̇li̇, İkram Orak +1

    Maqola20202 iqtibos
    ABI

  10. Infrared spectroscopy of the neutral zinc double-acceptor in silicon

    E. Merk, James Heyman, E. E. Häller

    Maqola19892 iqtibos
    ABI

  11. Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

    Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6

    Maqola20242 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI