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9 ta ish

Ish: Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

  1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201513 iqtibos
    ABI

  2. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

    M. G. Mil’vidskiĭ, V. V. Chaldyshev

    Maqola199813 iqtibos
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    MaqolaSemiconductor materials and interfacesInorganic Materials20125 iqtibos
    ABI

  4. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Maqola20175 iqtibos
    ABI

  5. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

    Yu. A. Astrov, Stephen A. Lynch, V. B. Shuman +3

    Maqola20133 iqtibos
    ABI

  6. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

    Yu. A. Astrov, В. А. Козлов, А. N. Lodygin +4

    Maqola20093 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  8. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    MaqolaChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI