Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
S. SadullaevInstitute of Fundamental and Applied Research under TIIAME NRU, Tashkent, Uzbekistan; National Research University TIIAME, Department of Physics and Chemistry, Tashkent, UzbekistanI. B. SapaevNational Research University TIIAME, Department of Physics and Chemistry, Tashkent, Uzbekistan; Institute of Fundamental and Applied Research under TIIAME NRU, Tashkent, UzbekistanKhidoyat E. AbdikarimovDepartment of interfaculty general technical sciences, Urgench State University, Urgench, Uzbekistan
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This paper presents a comprehensive theoretical study of p-n heterojunctions formed between cadmium telluride (CdTe) and silicon (Si) over the temperature range of 0 K to 800 K. We focus on band alignment, carrier transport mechanisms, and the temperature-dependent electrophysical properties of the heterojunctions. Through modeling approaches, we explore the energy band structure, intrinsic concentration, intrinsic electrical conductivity, and the impact of temperature variations on the heterojunction characteristics. Our findings provide insights into optimizing the performance of CdTe/Si heterojunctions for applications in photovoltaics and optoelectronics.
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