Ushbu ishga iqtibos qilgan ishlar

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Ish: Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

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2. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

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   ABIABI:AkademIndex/openalex/2026.article.006836