MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

In this work, a comprehensive numerical analysis of the influence of mechanical strain on Gallium Nitride (GaN) PN junctions is presented using Silvaco ATLAS. The study considers both compressive and tensile strain in the range of ±0.5%, analyzing their effects on the built-in potential, electric field distribution, carrier density, and current–voltage (I–V) characteristics. The results demonstrate that strain-induced piezoelectric polarization significantly alters the junction properties by modifying the internal electric field and depletion region width. These findings underline the critical role of strain engineering in optimizing GaN-based optoelectronic and power devices.

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