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H.Olimxonova

2 ta ish

1University of Business and Science. 111, Zarbdor str, Namangan, Uzbekistan

  1. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

    A.I.Mamadjanov, H.Olimxonova

    MaqolaGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)20250 iqtibos
    ABI

  2. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

    A.I.Mamadjanov, H.Olimxonova

    MaqolaGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)20250 iqtibos
    ABI