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20 ta ish

Ish: Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

  1. Thermal stress analysis of crystal growth in a horizontal Bridgman furnace

    Gregory Young, Karen A. McDonald, Ahmet Palazoğlu

    Maqola19973 iqtibos
    ABI

  2. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, A.S. Saidov, V. V. Gіrzhon +1

    MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 iqtibos
    ABI

  3. Liquid-phase epitaxy of GaAsZnSeGa2Se3 alloy crystals on a ZnSe substrate

    Masanori Kaji, Fumiyasu Kadotsuji, Masakazu Kimura +2

    Maqola19972 iqtibos
    ABI

  4. Composition-dependent perfect band gap tuning of ZnS1-x Sex solid solutions for efficient photocatalysis

    Wanxia Huang, Suxiang Ge, Yan Lei +1

    Maqola20192 iqtibos
    ABI

  5. Epitaxial growth of metastable semiconductor alloys

    G. B. Stringfellow

    Maqola20212 iqtibos
    ABI

  6. Deviation of the AlGaAs lattice constant from Vegard's law

    Daibing Zhou, B. F. Usher

    Maqola20012 iqtibos
    ABI

  7. On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates

    W. A. Jesser, D. Kuhlmann‐Wilsdorf

    Maqola19672 iqtibos
    ABI

  8. Misfit dislocations in semiconductors

    D. B. Holt

    Maqola19662 iqtibos
    ABI

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    Boshqa1 iqtibos
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  20. Sarlavhasiz

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