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257 ta ish

Ish: 2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications

  1. Recommended Methods to Study Resistive Switching Devices

    Mario Lanza, H.‐S. Philip Wong, Eric Pop +51

    Maqola20182 iqtibos
    ABI
  2. PRINCIPLES OF NEURAL SCIENCE

    Michael Henry

    Maqola19952 iqtibos
    ABI
  3. Memristive devices based on emerging two-dimensional materials beyond graphene

    Lei Zhang, Tian Gong, Huide Wang +2

    Maqola20192 iqtibos
    ABI
  4. Electronic and Photoelectronic Memristors Based on 2D Materials

    Kai Tang, Yang Wang, Chuanhui Gong +4

    Maqola20222 iqtibos
    ABI
  5. 2022 roadmap on neuromorphic devices and applications research in China

    Qing Wan, Changjin Wan, Huaqiang Wu +41

    Maqola20222 iqtibos
    ABI
  6. Short-Term Synaptic Plasticity

    Robert S. Zucker, Wade G. Regehr

    Sharh maqola20022 iqtibos
    ABI
  7. Field-Effect Transistors Based on Few-Layered α-MoTe<sub>2</sub>

    Nihar Pradhan, Daniel Rhodes, Simin Feng +6

    Maqola20142 iqtibos
    ABI