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Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

J. Sh. AbdullayevHead of the department «Physics and Chemistry», National Research University TIIAME, Kori Niyoziy 39, 100000, Tashkent, UzbekistanD. A. QalandarovaUrgench State University, Urgench, UzbekistanM. Sh. IbragimovaUrgench State University, Urgench, UzbekistanI. B. SapaevHead of the department «Physics and Chemistry», National Research University TIIAME, Kori Niyoziy 39, 100000, Tashkent, UzbekistanJ. I. RazzokovDepartment of Biotechnology, Tashkent State Technical University, Universitet 2, 100095, Tashkent, Uzbekistan

Journal of Electronic Materialsjournal2026en

ABI

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Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties

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DOI: 10.1007/s11664-025-12642-8

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