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J. Sh. Abdullayev

5 ta ish

Head of the department «Physics and Chemistry», National Research University TIIAME, Kori Niyoziy 39, 100000, Tashkent, Uzbekistan

  1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20260 iqtibos
    ABI

  2. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20260 iqtibos
    ABI

  3. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20260 iqtibos
    ABI

  4. Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

    Dildora Qalandarova, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20260 iqtibos
    ABI

  5. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 iqtibos
    ABI