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Impedance spectra of rhodium-doped silicon irradiated with alpha particles

Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, UzbekistanD.A. RakhmanovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, UzbekistanA.S. DoroshkevichDubna State University, 141982, Dubna, RussiaZh.V. MezentsevaJoint Institute for Nuclear Research, 141980, Dubna, RussiaR.Sh. IsayevJoint Institute for Nuclear Research, 141980, Dubna, RussiaА. TatarinovaImmanuel Kant Baltic Federal University, Kaliningrad, 236041, Russia

Radiation Physics and Chemistryjournal2026en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Silicon and Solar Cell Technologies Advanced Energy Technologies and Civil Engineering Innovations Advanced Materials and Semiconductor Technologies

Identifikatorlar

DOI: 10.1016/j.radphyschem.2026.113893

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