D.A. Rakhmanov

2 ta ish

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, Uzbekistan

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   MaqolaSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   MaqolaSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010369