A.S. Doroshkevich

4 ta ish

Institute of Materials Science of Uzbekistan Academy of Sciences, 102226, Tashkent, Uzbekistan

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   MaqolaSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Interfacial interactions and free volume in multicomponent titanium-based carbon-nitrides coatings

   Matlab N. Mirzayev, A. Atilgan, S.F. Samadov +12

   MaqolaMuon and positron interactions and applicationsCeramics International20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.002320

3. Effects of X-ray radiation on the electronic properties of MAPbBr3 perovskite films

   A.S. Doroshkevich, Zh.V. Mezentseva, L.M. Ledo-Pereda +11

   MaqolaPerovskite Materials and ApplicationsPhysics Letters A20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.004657

4. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   MaqolaSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010369