Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: High-resistance layers in <i>n</i>-type 4H-silicon carbide by hydrogen ion implantation

1. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000005

2. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000098