Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

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   ABIABI:AkademIndex/openalex/2026.other.203259

2. Influence of ion implantation and annealing on composition and structure of GaAs surface

   M.T. Normuradov

   MaqolaIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics20020 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000329

3. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

   S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

   MaqolaSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.006628