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Ish: Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals
I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3
Maqola20109 iqtibos
ABI
Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells
A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov
MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos
ABI
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4
Maqola20094 iqtibos
ABI
Sarlavhasiz
Boshqa3 iqtibos
ABI
Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots
A. Reznitsky, A. A. Klochikhin, M. V. Eremenko
Maqola20143 iqtibos
ABI
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence
A. Kosarev, V. V. Chaldyshev, В. В. Преображенский +2
Maqola20163 iqtibos
ABI
High-density InSb-based quantum dots emitting in the mid-infrared
Vittorianna Tasco, N. Deguffroy, А. Н. Баранов +5
Maqola20063 iqtibos
ABI
MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
P. Möck, G. R. Booker, N. J. Mason +4
Maqola20013 iqtibos
ABI
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev
Maqola20163 iqtibos
ABI
New system of self-assembled GaSb/GaP quantum dots
D. S. Abramkin, М. А. Putyato, А. К. Гутаковский +3
Maqola20122 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI