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20 ta ish
Ish: Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions
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AkademBaseEkotizim uchun ochiq API20 ta ish
Ish: Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions