Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

   A.S. Saidov, A. Sh. Razzokov

   MaqolaSemiconductor materials and interfacesCrystallography Reports20225 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.000489

2. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, A.S. Saidov, V. V. Gіrzhon +1

   MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.000838

3. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

   A.S. Saidov, Alozhon Sh. Razzokov

   MaqolaSilicon Nanostructures and PhotoluminescenceSiberian Journal of Physics20202 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.458750

4. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

   A. Sh. Razzakov, A. Latipova, Alibek Qodirov

   MaqolaSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.004376