Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   MaqolaSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.235254

3. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   MaqolaSilicon and Solar Cell TechnologiesJournal of Ovonic Research20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010786