Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Breaking the Doping Limit in Silicon by Deep Impurities

1. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20253 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.001173

2. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.000556

3. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.002954