Ushbu ish iqtibos qilgan ishlar

28 ta ish

Ish: Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance

Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors
U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1
MaqolaQuantum and electron transport phenomenaInternational Journal of Modern Physics B202020 iqtibos
ABI
On Temperature Dependence of Longitudinal Electrical Conductivity Oscillations in Narrow-gap Electronic Semiconductors
G. Gulyamov, U. I. Erkaboev, R. G. Rakhimov +1
Maqola202015 iqtibos
ABI
Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field
G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1
MaqolaSilicon and Solar Cell TechnologiesAIP conference proceedings20235 iqtibos
ABI
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Britton W. H. Baugher, Hugh Churchill, Yafang Yang +1
Maqola20144 iqtibos
ABI
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Marco M. Furchi, Andreas Pospischil, Florian Libisch +2
Maqola20143 iqtibos
ABI
Solar-energy conversion and light emission in an atomic monolayer p–n diode
Andreas Pospischil, Marco M. Furchi, Thomas Mueller
Sharh maqola20143 iqtibos
ABI
Changes in diodes with a p-n-transition under the influence of microwave radiation
G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1
MaqolaSemiconductor Quantum Structures and DevicesAIP conference proceedings20233 iqtibos
ABI
Changing the Voltage of the p-n Junction in a Magnetic Field
G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova
MaqolaSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 iqtibos
ABI
Tunable GaTe-MoS2 van der Waals p–n Junctions with Novel Optoelectronic Performance
Feng Wang, Zhenxing Wang, Kai Xu +5
Maqola20152 iqtibos
ABI
Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh +13
Maqola20152 iqtibos
ABI
Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes
Rui Cheng, Dehui Li, Hailong Zhou +7
Maqola20142 iqtibos
ABI
Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors
Zhenyi Ni, Lingling Ma, Sichao Du +10
Maqola20172 iqtibos
ABI
Atomically thin p–n junctions with van der Waals heterointerfaces
Chul‐Ho Lee, Gwan‐Hyoung Lee, Arend M. van der Zande +10
Maqola20142 iqtibos
ABI
Configuration‐Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2
Feng Wang, Lei Yin, Zhen Xing Wang +6
Maqola20162 iqtibos
ABI
Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
Tiefeng Yang, Biyuan Zheng, Zhen Wang +12
Maqola20172 iqtibos
ABI
Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
Michele Buscema, Dirk J. Groenendijk, Gary A. Steele +2
Maqola20142 iqtibos
ABI
2D pn junctions driven out-of-equilibrium
Ferney A. Chaves, Pedro C. Feijoo, David Jiménez
Maqola20202 iqtibos
ABI
Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov
MaqolaSolid-state spectroscopy and crystallographyAdvances in Condensed Matter Physics20192 iqtibos
ABI
Dynamically controllable polarity modulation of MoTe 2 field-effect transistors through ultraviolet light and electrostatic activation
Enxiu Wu, Yuan Xie, Jing Zhang +5
Maqola20192 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
ABI
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Boshqa1 iqtibos
ABI
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Boshqa1 iqtibos
ABI
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Ushbu ish iqtibos qilgan ishlar

Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

On Temperature Dependence of Longitudinal Electrical Conductivity Oscillations in Narrow-gap Electronic Semiconductors

Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

Solar-energy conversion and light emission in an atomic monolayer p–n diode

Changes in diodes with a p-n-transition under the influence of microwave radiation

Changing the Voltage of the p-n Junction in a Magnetic Field

Tunable GaTe-MoS<sub>2</sub> van der Waals p–n Junctions with Novel Optoelectronic Performance

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction <i>p–n</i> Diodes

Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors

Atomically thin p–n junctions with van der Waals heterointerfaces

Configuration‐Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe<sub>2</sub>/MoS<sub>2</sub>

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

2D pn junctions driven out-of-equilibrium

Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption

Dynamically controllable polarity modulation of MoTe <sub>2</sub> field-effect transistors through ultraviolet light and electrostatic activation

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