Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Semiconductor lasers with internal wavelength selection

1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   MaqolaIon-surface interactions and analysisTechnical Physics201513 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.095299

2. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

   Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

   MaqolaPhotocathodes and Microchannel PlatesTechnical Physics20198 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.232443

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20210 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.004233