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Ish: Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

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   A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

   MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.000597

2. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

   A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.222668

3. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

   A.S. Saidov, K. A. Amonov, Ada Yul'evna Leyderman

   MaqolaSemiconductor materials and interfacesComputational nanotechnology20194 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.467170