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6 ta ish

Ish: Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

  1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos
    ABI

  2. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos
    ABI

  3. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    MaqolaSilicon and Solar Cell TechnologiesInorganic Materials20183 iqtibos
    ABI

  4. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    MaqolaSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 iqtibos
    ABI

  5. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

    M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20211 iqtibos
    ABI

  6. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 iqtibos
    ABI