Ushbu ishga iqtibos qilgan ishlar

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Ish: Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

1. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos

   ABIABI:AkademIndex/openalex/2017.article.000161

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   MaqolaAdvancements in Semiconductor Devices and Circuit Design20144 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.386764