Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

1. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   MaqolaAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.001560

2. Structural Features of Silicon with Tin Impurity

   Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003699