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Ish: Isostructural BaSi₂, BaGe₂ and SrGe₂: electronic and optical properties

1. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

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2. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos

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