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Ish: Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

1. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.001842

2. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   MaqolaSemiconductor materials and devicesJournal of Computational Electronics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.007736

3. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.preprint.001199