Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: High-power InGaN/GaN double-heterostructure violet light emitting diodes

1. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

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2. Influence of annealing conditions on the structure and luminescence properties of KGd_1−xEu_x(MoO₄)₂ (0 ≤ <i>x</i> ≤ 1)

   Vladimir A. Morozov, Svetlana M. Posokhova, Dina V. Deyneko +7

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   ABIABI:AkademIndex/openalex/2019.article.000363