Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Nanosecond Risetime Pulse Characterization of SiC p<sup>+</sup>n Junction Diode Breakdown and Switching Properties

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   ABIABI:AkademIndex/openalex/2026.other.390748

2. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

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   ABIABI:AkademIndex/openalex/2026.other.390749